Resonant biaxial MEMS reflector with piezoelectric actuators, and projective MEMS system including the same

ABSTRACT

A MEMS device includes a fixed structure and a mobile structure with a reflecting element coupled to the fixed structure through at least a first deformable structure and a second deformable structure. Each of the first and second deformable structures includes a respective number of main piezoelectric elements, with the main piezoelectric elements of the first and second deformable structures configured to be electrically controlled for causing oscillations of the mobile structure about a first axis and a second axis, respectively. The first deformable structure further includes a respective number of secondary piezoelectric elements configured to be controlled so as to vary a first resonance frequency of the mobile structure about the first axis.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/162,367 filed May 23, 2016, which claims priority from ItalianApplication for Patent No. 102015000078398 filed Nov. 30, 2015, thedisclosures of which are incorporated by reference.

TECHNICAL FIELD

The present invention relates to a reflector of the MEMS(Micro-Electro-Mechanical Systems) type. In particular, the presentinvention relates to a resonant biaxial MEMS reflector, which includespiezoelectric actuators. Moreover, the present invention relates to aMEMS projective system including the resonant biaxial MEMS reflector.

BACKGROUND

As is known, numerous MEMS devices are today available. In particular,so-called MEMS reflectors are known, which include mobile elementsformed by mirrors.

In general, a MEMS reflector is designed to receive an optical beam andto vary the direction of propagation thereof, via a mirror. Typically,the direction of propagation of the optical beam is varied in a periodicor quasi-periodic way so as to carry out a scan of a portion of spacewith the reflected optical beam.

In greater detail, MEMS reflectors of a resonant type are moreoverknown. In general, a resonant MEMS reflector comprises an actuationsystem that causes oscillation of the respective mirror in asubstantially periodic way about a resting position, the period ofoscillation being as close as possible to the resonance frequency of themirror in order to maximize the angular distance covered by the mirrorduring each oscillation, and hence maximize the size of the portion ofspace scanned.

Among resonant MEMS reflectors, so-called biaxial MEMS reflectors aremoreover known, where the mirror oscillates about two different axes,perpendicular to one another, with frequencies approximately equal tothe respective resonance frequencies of the mirror with respect to theaforesaid axes.

In the context of generation of images using resonant biaxial MEMSreflectors, it is known to adopt markedly different resonancefrequencies for the two scanning axes. For example, resonant biaxialMEMS reflectors are known having their two resonance frequencies equal,for example, to 18 kHz and 600 Hz. Moreover, irrespective of thespecific values of the resonance frequencies, when an image is formedusing a resonant biaxial MEMS reflector, the latter directs thereflected optical beam in such a way that it follows a so-calledLissajous trajectory. Consequently, the full image is obtained as set ofinterlaced complementary images.

This having been said, the use of resonant biaxial MEMS reflectorsentails generation of images affected by so-called flicker. To overcomethis drawback, the so-called image-refresh rate is increased up tovalues much higher than sixty frames per second. Since, according toanother point of view, the flicker phenomenon can be interpreted as animperfect coverage of each frame, the increase in the refresh raterenders this phenomenon less perceptible to the human eye.

In order to reduce the flicker phenomenon, the paper Hofmann et al.,“Wafer level vacuum packaged two-axis MEMS scanning mirror for picoprojector application”, Proceedings of SPIE, Vol. 8977 89770A-11(incorporated by reference), suggests adoption of a biaxial structurewith high resonance frequencies, which ideally differ by 60 Hz. Inpractice, the aforementioned paper proposes a resonant biaxial MEMSreflector with an actuation system of an electrostatic type, where bothof the resonance frequencies are relatively high (one is 14.9 kHz andthe other is 15.6 kHz), the difference between them being 700 Hz. Thisenables reduction of the refresh rate to values of less than sixtyframes per second, without the flicker phenomenon excessively damagingthe quality of the images. However, unfortunately there are not knownsolutions that enable precise control of the difference between the tworesonance frequencies, even for particularly low values of thisdifference and in the case of operating bands that reach highfrequencies (for example, between 20 kHz and 30 kHz). In thisconnection, it should be noted how in theory the adoption of highresonance frequencies close to one another enables, given the samerefresh rate, a higher resolution to be obtained, as well as a bettercoverage of the images.

There is a need in the art to provide a MEMS device that will solve atleast in part the drawbacks of the known art.

SUMMARY

In an embodiment, a biaxial MEMS device includes a fixed structure, amobile structure with a reflecting element, a first deformable structurecoupled between the fixed structure and the mobile structure, and asecond deformable structure coupled between the fixed structure and themobile structure. Each of the first and second deformable structures hasa respective main body having an elongated shape along a respectivedirection of elongation. Each of the first and second deformablestructures includes a plurality of main piezoelectric elementsmechanically coupled to the respective main body and arranged in thedirection of elongation of the respective main body. The mainpiezoelectric elements of the first deformable structure areelectrically controllable to cause a deformation of the first deformablestructure along with an oscillation of the mobile structure about afirst axis. The main piezoelectric elements of the second deformablestructure are electrically controlled to cause a deformation of thesecond deformable structure along with an oscillation of the mobilestructure about a second axis.

Another aspect disclosed herein is a MEMS device including a fixedstructure and a mobile structure with a reflecting element coupled tothe fixed structure through at least a first deformable structure and asecond deformable structure. Each of the first and second deformablestructures includes a respective main body having an elongated shapealong a respective direction of elongation. A plurality of mainpiezoelectric elements are mounted to the main body of each of the firstand second deformable structures along the direction of elongation. Themain piezoelectric elements are configured to be electrically controlledfor causing oscillations of the mobile structure about a first axis anda second axis, respectively. A plurality of secondary piezoelectricelements are mounted to the main body of each of the first and seconddeformable structures, with the main piezoelectric elements and thesecondary piezoelectric elements being interspersed with one another inthe direction of elongation, and with secondary piezoelectric elementsmounted to the first deformable structure configured to be controlled soas to vary a first resonance frequency of the mobile structure about thefirst axis.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the present invention, preferredembodiments thereof are now described, purely by way of non-limitingexample and with reference to the attached drawings, wherein:

FIG. 1 shows a block diagram of a projective system including a MEMSreflector;

FIG. 2 is a schematic perspective view with portions removed of the MEMSreflector;

FIG. 3 shows an enlargement of a portion of FIG. 2;

FIGS. 4 and 5 are schematic cross-sectional views (not in scale) of theMEMS reflector, taken respectively along lines of section IV-IV and V-Vshown in FIG. 2;

FIG. 6 shows a block diagram that illustrates electrical connectionsbetween portions of a MEMS system that includes the MEMS reflector;

FIG. 7A is a schematic side view of a portion of the MEMS reflector,when subjected to an oscillation;

FIG. 7B is a schematic perspective view with portions removed of theMEMS reflector, when subjected to an example of deformation;

FIG. 8 is a schematic cross-sectional view (not in scale) of a portionof the MEMS reflector, when subjected to bending, this section beingtaken along the line of section VIII-VIII shown in FIG. 2; and

FIGS. 9 and 10 are schematic perspective views of portable apparatusesthat incorporate the projective system.

DETAILED DESCRIPTION

FIG. 1 shows a MEMS projective system 1, which includes a light source 2formed by a plurality of LEDs 4, each of which emits electromagneticradiation at a corresponding wavelength. For example, FIG. 1 shows threeLEDs 4, which emit radiation, respectively, around the red (620-750 nm)wavelength, the green (495-570 nm) wavelength, and the blue (450-475 nm)wavelength.

The MEMS projective system 1 further comprises an optical combiner 6 anda MEMS reflector 8. Moreover, FIG. 1 shows also a screen 9. The MEMSprojective system 1 forms a so-called pico-projector.

The optical combiner 6 is arranged downstream of the light source 2 soas to receive the electromagnetic radiation emitted by the LEDs 4 andform a single optical beam OB1, obtained from the combination of saidelectromagnetic radiation. For this purpose, the optical combiner 6 may,for example, include one or more dichroic elements. Moreover, theoptical combiner 6 is designed to direct the optical beam OB1 onto theMEMS reflector 8. In turn, the MEMS reflector 8, described in greaterdetail hereinafter, is designed to reflect the optical beam OB1, thusgenerating a reflected optical beam OB2, and to send the reflectedoptical beam OB2 onto the screen 9 for bringing about formation ofimages on the screen 9.

In detail, the MEMS reflector 8 is designed to vary in time theorientation in space of the axis of the reflected optical beam OB2 so asto scan in a substantially periodic way portions of the screen 9. Asdescribed in greater detail hereinafter, the MEMS reflector 8 is of abiaxial type, with axes orthogonal to one another.

As shown in FIG. 2, the MEMS reflector 8 comprises a structure 10, whichwill be referred to in what follows as the fixed structure 10, as wellas a mobile structure 12, and four structures, which will be referred toin what follows as the first connection structure 22, the secondconnection structure 24, the third connection structure 26, and thefourth connection structure 28.

In greater detail, the fixed structure 10 comprises a respective bottomportion 11 a. The bottom portion 11 a of the fixed structure 10 has theshape of a parallelepiped with square base, extending inside which is acavity 30 of a through type, which to a first approximation also has theshape of a parallelepiped with square base. The cavity 30 is thendelimited laterally by a first side wall P₁, a second side wall P₂, athird side wall P₃, and a fourth side wall P₄. Moreover, the first andthird side walls P₁, P₃ are opposite to one another and are parallel toan axis x of an orthogonal reference system xyz, whereas the second andfourth side walls P₂, P₄ are opposite to one another and parallel to theaxis y of the reference system xyz.

Without any loss of generality, the first, second, third, and fourthconnection structures 22, 24, 26, 28 are the same as one another. Forthis reason, in what follows, the description is limited to the firstconnection structure 22, it being understood that the second, third, andfourth connection structures 24, 26, 28 are the same as the firstconnection structure 22, except where otherwise specified.

The first connection structure 22 is elastically deformable. Inaddition, as shown in FIG. 3, the first connection structure 22comprises a supporting structure 32, which is described hereinafter, onthe hypothesis that the first connection structure 22 is in restingconditions, except where otherwise specified.

In detail, the supporting structure 32 extends in the cavity 30 andcomprises a first portion 33 and a second portion 34.

In greater detail, the first portion 33 of the supporting structure 32has an elongated shape parallel to the axis x. The second portion 34 ofthe supporting structure 32 forms a main body 36, a plurality oftransverse elements of a first type, designated by 38, and a pluralityof transverse elements of a second type, designated by 39. The main body36 has an elongated shape and extends parallel to the axis y. Moreover,the main body 36 is connected to the first portion 33 of the supportingstructure 32 so as to form approximately an L shape. More in particular,the first portion 33 of the supporting structure 32 and the main body 36of the second portion 34 of the supporting structure 32 form,respectively, the short arm and the long arm of the L shape defined bythe supporting structure 32. In addition, a first end of the supportingstructure 32, defined by the first portion 33, is fixed to the mobilestructure 12, and a second end of the supporting structure 32, definedby the main body 36, is fixed to the first side wall P₁.

As regards the transverse elements 38 of the first type and thetransverse elements 39 of the second type, they have an elongated shapedirected parallel to the axis x. In other words, the transverse elementsare elongated in a direction perpendicular to the direction of extensionof the main body 36.

If the transverse elements 38 of the first type and the transverseelements 39 of the second type are referred to, respectively, as theinner transverse elements 38 and outer transverse elements 39, to eachinner transverse element 38 there corresponds a respective outertransverse element 39. Furthermore, the outer transverse elements 39extend from the main body 36 towards the bottom portion 11 a of thefixed structure 10, and in particular towards the second side wall P₂;the inner transverse elements 38 extend from the main body 36 towardsthe mobile structure 12, i.e., towards the fourth side wall P₄. More inparticular, each inner transverse element 38 is aligned (parallel to theaxis x) to the corresponding outer transverse element 39. Thesetransverse elements extend on opposite sides with respect to the mainbody 36. Purely by way of example, in the embodiment shown in FIG. 3,eight pairs of transverse elements are present.

The first and second portions 33, 34 of the supporting structure 32 aredelimited at the top by a top surface S₃₂. The top surface S₃₂ hencedelimits the main body 36, the inner transverse elements 38, and theouter transverse elements 39.

The first connection structure 22 further comprises a plurality ofpiezoelectric regions 40, which will be referred to in what follows asthe main piezoelectric regions 40.

In detail, the main piezoelectric regions 40 are made, for example, oflead zirconate titanate (PZT) and extend on the top surface S₃₂. Inparticular, the main piezoelectric regions 40 are arranged in successionin a direction parallel to the axis y, in contact with the main body 36;i.e., they are arranged one after another in the longitudinal directionof the main body 36, at a distance from one another.

In greater detail, and without any loss of generality, each mainpiezoelectric region 40 may have, for example, the shape of aparallelepiped with a height (measured along the axis z) smaller thanthe length and the width, either the length or the width being parallelto the axis x.

The first connection structure 22 further comprises a plurality ofadditional piezoelectric regions 42, which will be referred to in whatfollows as the secondary piezoelectric regions 42.

The secondary piezoelectric regions 42 are made, for example, of leadzirconate titanate. In addition, without any loss of generality, eachsecondary piezoelectric region 42 has an elongated shape, in a directionparallel to the axis x. For example, each secondary piezoelectric region42 may have the shape of a parallelepiped with a height smaller than thelength (parallel to the axis x) and than the width.

In greater detail, the secondary piezoelectric regions 42 extend on thetop surface S₃₂. In particular, the secondary piezoelectric regions 42are arranged in succession in a direction parallel to the axis y, incontact with the main body 36. More in particular, each secondarypiezoelectric region 42 extends in contact with a corresponding pairformed by an inner transverse element 38 and by the corresponding outertransverse element 39, as well as in contact with the portion of themain body 36 from which this inner transverse element 38 and thiscorresponding outer transverse element 39 extend. Each secondarypiezoelectric region 42 hence has an elongated shape in a directionparallel to the axis x.

Once again with reference to the main piezoelectric regions 40, each ofthem extends on a corresponding portion of the main body 36. Moreover,the portions of main body 36 on which corresponding main piezoelectricregions 40 extend are interspersed with the portions of main body 36 onwhich the secondary piezoelectric regions 42 extend. Consequently, in adirection parallel to the axis y, the main piezoelectric regions 40 andthe secondary piezoelectric regions 42 are interspersed with oneanother.

For reasons described hereinafter, in use the main piezoelectric regions40 are electrically connected to a first a.c. generator 48, which isdesigned to generate an a.c. voltage. In particular, the mainpiezoelectric regions 40 are connected to one and the same firstterminal of the first a.c. generator 48, the second terminal of which isset, for example, to ground. The secondary piezoelectric regions 42 are,instead, electrically connected to one and the same first terminal of afirst d.c. generator 50, the second terminal of which is connected, forexample, to ground. The first d.c. generator 50 is designed to generatea d.c. voltage, which can be varied in a controlled way. In FIG. 3, theelectrical connections between the main/secondary piezoelectric regions40/42 and the first a.c./d.c. generator 48/50 are representedqualitatively.

Once again with reference to the aforementioned bottom portion 11 a ofthe fixed structure 10, it comprises a semiconductor region 60 (shown inFIG. 4), which is made, for example, of silicon and which will bereferred to in what follows as the fixed semiconductor region 60.

The bottom portion 11 a of the fixed structure 10 further comprises aconductive region 62 and a first insulating region 64 and a secondinsulating region 66, which will be referred to in what follows,respectively, as the fixed conductive region 62 and the first and secondfixed insulating regions 64, 66.

The first fixed insulating region 64 is made, for example, of thermaloxide and extends over the fixed semiconductor region 60, with which itis in direct contact. The fixed conductive region 62 is made, forexample, of polysilicon and extends over the first fixed insulatingregion 64, with which it is in direct contact. The second fixedinsulating region 66 is made, for example, of TEOS oxide and extendsover the fixed conductive region 62, with which it is in direct contact.

The bottom portion 11 a of the fixed structure 10 further comprises anelectrode region 68, which will be referred to in what follows as thefixed electrode region 68. In detail, the fixed electrode region 68 ismade, for example, of a metal (for example, ruthenium) and extends overthe second fixed insulating region 66, with which it is in directcontact.

As regards the supporting structure 32 of the first connection structure22, it comprises a respective semiconductor region 70, which is made,for example, of silicon and which will be referred to in what follows asthe deformable semiconductor region 70.

In resting conditions, the deformable semiconductor region 70 isdelimited at the top by a surface S₇₀ of a planar type, which will bereferred to in what follows as the first intermediate surface S₇₀.Moreover, if the surface that delimits at the top the fixedsemiconductor region 60 is referred to as the second intermediatesurface S₆₀, in resting conditions the first intermediate surface S₇₀ iscoplanar with the second intermediate surface S₆₀. Moreover, thedeformable semiconductor region 70 has a smaller thickness than thefixed semiconductor region 60 and delimits a portion of the cavity 30 atthe top.

The supporting structure 32 of the first connection structure 22 furthercomprises a respective conductive region 72, a respective firstinsulating region 74, and a respective second insulating region 76,which will be referred to in what follows, respectively, as thedeformable conductive region 72 and the first and second deformableinsulating regions 74, 76.

The first deformable insulating region 74 is made, for example, ofthermal oxide and extends over the deformable semiconductor region 70,with which it is in direct contact. Without any loss of generality, thefirst deformable insulating region 74 has the same thickness as thefirst fixed insulating region 64.

The deformable conductive region 72 is made, for example, of polysiliconand extends over the first deformable insulating region 74, with whichit is in direct contact. Without any loss of generality, the deformableconductive region 72 has the same thickness as the fixed conductiveregion 62.

The second deformable insulating region 76 is made, for example, of TEOSoxide and extends over the deformable conductive region 72, with whichit is in direct contact. Without any loss of generality, the seconddeformable insulating region 76 has the same thickness as the secondfixed insulating region 66.

The supporting structure 32 of the first connection structure 22 furthercomprises a respective electrode region 78, which will be referred to inwhat follows as the bottom electrode region 78. In detail, the bottomelectrode region 78 is made, for example, of platinum and extends overthe second deformable insulating region 76, with which it is in directcontact.

The bottom electrode region 78 is delimited at the top by theaforementioned top surface S₃₂. Without any loss of generality, thebottom electrode region 78 has the same thickness as the fixed electroderegion 68. Moreover, the bottom electrode region 78 and the fixedelectrode region 68 form a single region, i.e., form a single piece; inuse, said region can be set to ground, as described hereinafter.

In practice, the main piezoelectric regions 40 and the secondarypiezoelectric regions 42 extend over the bottom electrode region 78,with which they are in direct contact. In this connection, purely by wayof example, the cross section shown in FIG. 4 is represented so as toshow a secondary piezoelectric region 42. Without any loss ofgenerality, in the embodiment shown in FIG. 4, each one of the mainpiezoelectric regions 40 and the secondary piezoelectric regions 42extends parallel to the axis x for an extension smaller than thecorresponding extension of the underlying portion of bottom electroderegion 78, thus leaving a part of the latter exposed.

Extending over each main piezoelectric region 40 and each secondarypiezoelectric region 42, in direct contact therewith, is a correspondingmetal region 92, made, for example, of an alloy of metal materials.Without any loss of generality, in the embodiment illustrated in FIG. 4,each main piezoelectric region 40 and each secondary piezoelectricregion 42 are entirely coated by the corresponding metal regions 92.

The first connection structure 22 further comprises a dielectric region94, which will be referred to in what follows as the deformabledielectric region 94.

In detail, the deformable dielectric region 94 is made, for example, ofsilicon oxide, or else silicon nitride, and extends, in direct contacttherewith, over the metal regions 92 and the exposed portions of thebottom electrode region 78.

The first connection structure 22 further comprises a firstmetallization 96, which in part extends on the deformable dielectricregion 94 and in part traverses the deformable dielectric region 94itself, until it comes into contact with the secondary piezoelectricregions 42. The first metallization 96 hence enables electricalconnection of the secondary piezoelectric regions 42 to the first d.c.generator 50.

The first connection structure 22 further comprises a secondmetallization 110, which will be described in detail hereinafter and isarranged on the deformable dielectric region 94. Moreover, the firstconnection structure 22 comprises a further dielectric region 98, whichwill be referred to in what follows as the deformable passivation region98.

In detail, the deformable passivation region 98 is made, for example, ofsilicon nitride and extends on the deformable dielectric region 94 andthe first and second metallizations 96, 110.

Without any loss of generality, it is possible, as shown in FIG. 4, forthe fixed structure 10 to comprise moreover a respective dielectricregion 104, which will be referred to in what follows as the fixeddielectric region 104. The fixed dielectric region 104 may be made ofthe same material of which the deformable dielectric region 94 is madeand extends on the fixed electrode region 68. In addition, the fixeddielectric region 104 and the deformable dielectric region 94 may form asingle overall region; i.e., they may not be physically separate.

The fixed structure 10 further comprises a third metallization 106,which extends through the fixed dielectric region 104, as far as intocontact with the fixed electrode region 68. In use, as mentionedpreviously, the third metallization 106 makes it possible to set toground the fixed electrode region 68 and the bottom electrode region 78.

In the embodiment shown in FIG. 4, the fixed structure 10 comprises afurther dielectric region 108, which will be referred to in what followsas the fixed passivation region 108. The fixed passivation region 108extends on the fixed dielectric region 104 and the third metallization106, leaving a portion of the third metallization 106 exposed. The fixedpassivation region 108 and the deformable passivation region 98 may forma single region.

Once again with reference to the second metallization 110, as shown inFIG. 5, in part it extends on the deformable dielectric region 94 and inpart it traverses the deformable dielectric region 94 itself until itcomes into contact with the main piezoelectric regions 40. The secondmetallization 110 hence enables electrical connection of the mainpiezoelectric regions 40 to the first a.c. generator 48.

As regards the mobile structure 12, as shown in FIG. 4, it furthercomprises a respective semiconductor region 80, a respective conductiveregion 82, a respective first insulating region 84, and a respectivesecond insulating region 86, which will be referred to in what follows,respectively, as the mobile semiconductor region 80, the mobileconductive region 82 and the first and second mobile insulating regions84, 86.

The mobile semiconductor region 80, the first mobile insulating region84, the mobile conductive region 82, and the second mobile insulatingregion 86 are arranged in succession, stacked on top of one another.Moreover, the mobile semiconductor region 80, the first mobileinsulating region 84, the mobile conductive region 82, and the secondmobile insulating region 86 may have the same thicknesses as thedeformable semiconductor region 70, the first deformable insulatingregion 74, the deformable conductive region 72, and the seconddeformable insulating region 76, respectively.

The mobile semiconductor region 80, the fixed semiconductor region 60,and the deformable semiconductor region 70 may form a singlesemiconductor region.

The first fixed insulating region 64, the first deformable insulatingregion 74, and the first mobile insulating region 84 may form a singleinsulating region. Likewise, the second fixed insulating region 66, thesecond deformable insulating region 76, and the second mobile insulatingregion 86 may form a single insulating region.

In addition, the fixed conductive region 62, the deformable conductiveregion 72, and the mobile conductive region 82 may form a singleconductive region.

Present on the second mobile insulating region 86 is a mirror 90, whichis arranged in direct contact with the second mobile insulating region86 and is made, for example, of a metal film (for example, an aluminumfilm).

Once again with reference to the second, third, and fourth connectionstructures 24, 26, 28, they are fixed to the second, third, and fourthside walls P₂, P₃, P₄, respectively. In addition, in top plan view, thesecond connection structure 24 is rotated through 90° in acounterclockwise direction with respect to the first connectionstructure 22 in such a way that its own main body is oriented parallelto the axis x. The third connection structure 26 is rotated through 180°in a counterclockwise direction with respect to the first connectionstructure 22 in such a way that its own main body is oriented parallelto the axis y. Finally, the fourth connection structure 28 is rotatedthrough 270° in a counterclockwise direction with respect to the firstconnection structure 22 in such a way that its own main body is orientedparallel to the axis x. Again, the points of fixing of the first,second, third, and fourth connection structures 22, 24, 26, 28 to themobile structure 12 are arranged substantially at the same distance froman axis of symmetry H of the mobile structure 12 (in restingconditions). These fixing points are moreover spaced at equal anglesapart from one another in such a way that adjacent fixing points areangularly spaced apart by 90°.

As shown in FIG. 6, the MEMS projective system 1 further comprises asecond a.c. generator 138, a third a.c. generator 148, and a fourth a.c.generator 158, as well as a second d.c. generator 140, a third d.c.generator 150, and a fourth d.c. generator 160. In FIG. 6, the a.c.voltages generated by the first, second, third, and fourth a.c.generators 48, 138, 148, and 158 are designated, respectively, byV_(AC1), V_(AC2), V_(AC3), and V_(AC4), whereas the d.c. voltagesgenerated by the first, second, third, and fourth d.c. generators 50,140, 150, and 160 are designated, respectively, by V_(DC1), V_(DC2),V_(DC3), and V_(DC4). Moreover, FIG. 6 shows how the first a.c.generator 48 and the first d.c. generator 50 apply, respectively, theaforementioned voltages V_(AC1) and V_(DC1) to the main piezoelectricregions (here designated by 40′) and to the secondary piezoelectricregions (here designated by 42′) of the first connection structure 22.The second, third, and fourth a.c. generators 138, 148, 158 apply theaforementioned voltages V_(AC2), V_(AC3), and V_(AC4), respectively, tothe main piezoelectric regions (designated, respectively, by 40″, 40′″,and 40″″) of the second, third, and fourth connection structures 24, 26,28. The second, third, and fourth d.c. generators 140, 150, 160 apply,respectively, the aforementioned voltages V_(DC2), V_(DC3), and V_(DC4)to the secondary piezoelectric regions (designated, respectively, by42″, 42″, and 42″″) of the second, third, and fourth connectionstructures 24, 26, 28.

In greater detail, the voltages V_(AC1) and V_(AC3) have one and thesame amplitude (for example, approximately 30 V), one and the samefrequency f₁, and are in phase opposition; i.e., they are phase shiftedby 180° with respect to one another. The voltages V_(AC2) and V_(AC4)have a same amplitude, a same frequency f₂, and are in phase opposition;i.e., they are phase shifted by 180° with respect to one another.

This being said, the first and third connection structures 22, 26 form afirst actuation unit such that, following upon application of theaforementioned voltages V_(AC1) and V_(AC3), this first actuation unitcauses an oscillation (about the resting position and with a frequencyequal to the aforementioned frequency f₁) of the mobile structure 12,about an axis A₁, which is inclined by 45° with respect to the axis xand passes, for example, through the centroid of the mobile structure12. In practice, this oscillation is due to the periodic deformationsundergone by the first and third connection structures 22, 26 on accountof application of the aforementioned voltages V_(AC1) and V_(AC3).

In greater detail, considering, for example, the main piezoelectricregions 40 of the first connection structure 22, when they are subjectedto a voltage that is, for example, positive, they undergo, amongst otherthings, lengthening in directions parallel to the axes x and y. In otherwords, there occurs a differential lengthening of each mainpiezoelectric region 40 with respect to the underlying supportingstructure 32, what entails, in a way similar to what occurs in the caseof bimetallic strips, bending of the first connection structure 22, withconsequent curving of the latter. In particular, the first connectionstructure 22 bends in such a way that the first portion 33 of thesupporting structure 32, fixed to the mobile structure 12, lowers,drawing along with it the part of mobile structure 12 to which it isfixed. Instead, in the case where to the main piezoelectric regions 40 avoltage that is, for example, negative is applied, the deflection of thefirst connection structure 22 is such that the first portion 33 of thesupporting structure 32 rises. In either case, to a first approximation,the deflection of the first connection structure 22 occurs in a planeparallel to the plane yz, as shown qualitatively in FIG. 7A, where forsimplicity possible torsions about the longitudinal axis of the mainbody 36 are not represented. The hypothetical deformations of the firstconnection structure 22 shown in FIG. 7A are hence purely qualitative,to provide an explanatory example.

This being said, since the main piezoelectric regions 40 of the firstand third connection structures 22, 26 are driven in phase opposition,corresponding to a rise of the first portion 33 of the supportingstructure 32 of the first connection structure 22 is a lowering of thecorresponding portion of the third connection structure 26, withconsequent rotation of the mobile structure 12.

For the same reasons, the second and fourth connection structures 24, 28form a second actuation unit such that, following upon application ofthe aforementioned voltages V_(AC2) and V_(AC4), this second actuationunit causes an oscillation (about the resting position and with afrequency equal to the aforementioned frequency f₂) of the mobilestructure 12, about an axis A₂ inclined by 45° with respect to the axesx and y and orthogonal to the axis A₁. An example of possibledeformation to which the MEMS reflector 8 is subjected is shownqualitatively in FIG. 7B.

In greater detail, the aforementioned frequencies f₁ and f₂ areapproximately equal to the resonance frequencies of the mobile structure12, respectively about the aforementioned axes A₁ and A₂, in order toconvert electrical energy into kinetic energy in an efficient way. Inother words, if f_(r1) and f_(r2) are the resonance frequencies of themobile structure 12 about the aforementioned axes A₁ and A₂,respectively, we have f₁≈f_(r1) and f₂≈_(r2).

In greater detail, the resonance frequencies f_(r1) and f_(r2) dependupon the voltages V_(Dci), V_(DC2), V_(DC3), and V_(DC4). In whatfollows it is assumed, without any loss of generality, thatV_(DC1)=V_(DC3)=V_(axis1) and V_(DC2)=V_(DC4)=V_(axis2).

Once again in greater detail, the MEMS reflector 8 is such that, ifV_(DC1)=V_(DC2)=V_(DC3)=V_(DC4), we have f_(r1)=f_(r2), since the MEMSreflector 8 exhibits a symmetry about the axis of symmetry H. This beingsaid, the resonance frequency f_(r1) can be modulated by varying thevoltage V_(axis1), whereas the resonance frequency f_(r2) can bemodulated by varying the voltage V_(axis2).

In practice, the first, second, third, and fourth connection structures22, 24, 26, and 28 function as springs. The voltage V_(axis1) modulatesthe stiffness of the first and third connection structures 22, 26,whereas the voltage V_(axis2) modulates the stiffness of the second andfourth connection structures 24, 28. In particular, with reference, forexample, to the first connection structure 22, the voltage V_(axis1)modulates the stiffness of the first connection structure 22 in regardto deformations in the plane yz, i.e., to deformations that causeoscillation of the mobile structure 12 about the axis A₁.

In greater detail, with reference, for example, to the first connectionstructure 22, in the case where, for example, V_(axis1)>0, there occurs(amongst other things) a differential lengthening of each secondarypiezoelectric region 42, parallel to the axis x, with respect to theunderlying supporting structure 32. This entails a deflection of eachsecondary piezoelectric region 42 and of the underlying portion ofsupporting structure 32. In particular, the ends (with respect to adirection parallel to the axis x) of the secondary piezoelectric region42, that are arranged, respectively, on the corresponding innertransverse element 38 and on the corresponding outer transverse element39, tend to rise. In other words, each secondary piezoelectric region 42and the underlying portion of supporting structure 32 bend in a planeparallel to the plane xz. Consequently, each secondary piezoelectricregion 42 and the underlying portion of supporting structure 32, andconsequently the second portion 34 of the supporting structure 32, tendto assume a U shape, as shown qualitatively in FIG. 8, with consequentvariation of the stiffness of the first connection structure 22, asmentioned previously. In this connection, the presence of the innertransverse elements 38 and of the outer transverse elements 39 and theelongated shape of the secondary piezoelectric elements 42 enablevariation of the stiffness of the corresponding connection structure inan efficient way, hence with low voltages. In particular, as mentionedpreviously, the stiffness of the first connection structure 22 in regardto deformations that cause oscillation of the mobile structure 12 aboutthe axis A₁ is varied.

To a first approximation, the resonance frequency of each connectionstructure varies linearly as a function of the voltage applied to itsown secondary piezoelectric regions. This being said, imposing forexample V_(DC1)=V_(DC2)=V_(axis1)≠V_(axis2)=V_(DC3)=V_(DC4), a deviationΔf_(r) between the resonance frequencies f_(r1) and f_(r2) of the MEMSreflector 8 is induced. Moreover, it may be shown that the MEMSreflector 8 enables precise control of deviations Δf_(r) in the regionof a few tens of hertz, even when the resonance frequencies f_(r1) andf_(r2) are in the region of 30 kHz.

As illustrated in FIG. 9, the MEMS projective system 1 may be providedas separate, stand-alone, accessory with respect to an associatedportable electronic apparatus 200, such as, for example, a cellphone orsmartphone (or else, for instance, a PDA, a tablet, a digital audioplayer, or a controller for videogames), being coupled to the portableelectronic apparatus 200 itself by means of suitable electrical andmechanical connection elements (not illustrated in detail). In thiscase, the MEMS projective system 200 is provided with a case 201 of itsown, which has at least one portion 202 transparent to the reflectedoptical beam OB2 generated by the MEMS reflector 8. The case 201 of theMEMS projective system 1 is coupled in a releasable way to a respectivecase 203 of the portable electronic apparatus 200. Alternatively, asillustrated in FIG. 10, the MEMS projective system 1 may be integratedwithin the portable electronic apparatus 200, being arranged in the case203 of the portable electronic apparatus 200 itself, which has in thiscase a respective portion 204 transparent to the reflected optical beamOB2 generated by the MEMS reflector 8. In this case, the MEMS system 1is, for example, coupled to a printed circuit present within the case203 of the portable electronic apparatus 200.

From what has been described and illustrated previously, the advantagesthat the present solution affords emerge clearly.

In particular, thanks to the use of an elastic actuation system of apiezoelectric type, the present MEMS device enables implementation of anoptical scan along two axes, with high scanning frequencies, whichdiffer from one another by approximately 0.1%. This makes it possible toreduce the flicker phenomenon and to generate high-resolution images.Moreover, the difference in frequency can be modulated electrically inan extremely precise way.

In conclusion, it is clear that modifications and variations may be madeto what has been described and illustrated herein, without therebydeparting from the sphere of protection of the present invention, asdefined in the annexed claims.

For example, the connection structures may have shapes and arrangementdifferent from what has been described previously. For instance, withineach connection structure, the number, shape, and arrangement of themain piezoelectric regions 40 and of the secondary piezoelectric regions42 may be different from what has been described, as likewise the shapeof the first and second portions 33, 34 of the supporting structure 32.

More in general, each connection structure may have a composition(understood as shape, number, and type of regions that form it) that isdifferent from the one described. For example, it is possible for thesupporting structure 32 to be made up of a different number of regions,or in any case of regions of a type different from the one described.For instance, the deformable semiconductor structure 70 may be absentand/or the shape and arrangement of the first and second metallizations96, 110 and of the metal region 92 may be different from what has beendescribed. Likewise, also the composition of the fixed structure 10 maybe different from what has been described.

The number of the connection structures may be different from what hasbeen described. For example, embodiments are possible that comprise justone connection structure for each actuation unit. For example, it isthus possible for there to be present only the first and secondconnection structures 22, 24. In addition, irrespective of the number ofconnection structures, it is possible for them to have a differentmutual arrangement. For instance, embodiments (not shown) are possiblethat include three connection structures.

Finally, the actuation units may be actuated in a different way fromwhat has been described. For example, with reference, without any lossof generality, to the embodiment shown in FIG. 1, it is, for example,possible to have V_(AC3)=V_(AC4)=0, in which case, the third and fourthconnection structures 26, 28 are not actuated. In this case, it ismoreover possible for the third and fourth connection structures 26, 28to be without the respective main piezoelectric elements. Moreover, itis, for example, possible for the voltages (for example) V_(AC1) andV_(AC3) to be of a unipolar type and such that, when one of them assumesa positive value, the other assumes a zero or negative value.

As regards bending of the secondary piezoelectric elements 42, it can becontrolled indifferently with a positive or negative voltage, which canalso cause an opposite curving with respect to what has been shownpreviously. Moreover, it is possible to have V_(DC1)≠V_(DC2) and/orV_(DC3)≠V_(DC4).

Finally, embodiments are possible in which the secondary elements 42 arearranged on a subset of the connection structures. For example, anembodiment is possible that includes only the first and secondconnection structures 22, 24, or in any case in which the third andfourth connection structures 26, 28 are without main piezoelectricelements (and possibly also without the secondary piezoelectricelements), and in which only one between the first and second connectionstructures 22, 24 comprises the secondary piezoelectric elements 42.

The invention claimed is:
 1. A MEMS device, comprising: a fixedstructure made at least in part of semiconductor material; a mobilestructure including a reflecting element; a first deformable structurecoupled between the fixed structure and the mobile structure; and asecond deformable structure coupled between the fixed structure and themobile structure; wherein each of the first and second deformablestructures comprises a respective bottom electrode region; wherein eachof the first and second deformable structures has a respective main bodyhaving an elongated shape along a respective direction of elongation;wherein each of the first and second deformable structures comprises aplurality of main piezoelectric elements mechanically coupled to saidrespective main body and arranged in the direction of elongation of saidrespective main body; the main piezoelectric elements of the firstdeformable structure extending on top of the bottom electrode region ofthe first deformable structure and being electrically controllable tocause a deformation of the first deformable structure along with anoscillation of the mobile structure about a first axis; the mainpiezoelectric elements of the second deformable structure extending ontop of the bottom electrode region of the second deformable structureand being electrically controlled to causing a deformation of the seconddeformable structure along with an oscillation of the mobile structureabout a second axis; and wherein the reflecting element is greater thaneach of the plurality of main piezoelectric elements in length andwidth.
 2. A MEMS device comprising: a fixed structure; a mobilestructure including a reflecting element; a first deformable structurecoupled between the fixed structure and the mobile structure; and asecond deformable structure coupled between the fixed structure and themobile structure; wherein each of the first and second deformablestructures has a respective main body having an elongated shape along arespective direction of elongation; wherein each of the first and seconddeformable structures comprises a plurality of main piezoelectricelements mechanically coupled to said respective main body and arrangedin the direction of elongation of said respective main body; the mainpiezoelectric elements of the first deformable structure beingelectrically controllable to cause a deformation of the first deformablestructure along with an oscillation of the mobile structure about afirst axis; the main piezoelectric elements of the second deformablestructure being electrically controlled to causing a deformation of thesecond deformable structure along with an oscillation of the mobilestructure about a second axis; and wherein the first deformablestructure further comprises secondary piezoelectric elementsmechanically coupled to said respective main body, the secondarypiezoelectric elements being electrically controlled to cause a furtherdeformation of the first deformable structure which varies a firstresonance frequency of the oscillation of the mobile structure about thefirst axis.
 3. The MEMS device of claim 2, wherein the mainpiezoelectric elements and the secondary piezoelectric elements areinterspersed with one another in said direction of elongation of saidrespective main body.
 4. The MEMS device of claim 3, wherein thesecondary piezoelectric elements each have an elongated shape extendingin a direction transverse to the direction of elongation of said mainbody.
 5. The MEMS device of claim 2, wherein the second deformablestructure further comprises secondary piezoelectric elementsmechanically coupled to said respective main body, the secondarypiezoelectric elements being electrically controlled to cause a furtherdeformation of the second deformable structure which varies a secondresonance frequency of the oscillation of the mobile structure about thesecond axis.
 6. The MEMS device of claim 5, wherein the mainpiezoelectric elements and the secondary piezoelectric elements areinterspersed with one another in said direction of elongation of saidrespective main body.
 7. The MEMS device of claim 6, wherein thesecondary piezoelectric elements each have an elongated shape extendingin a direction transverse to the direction of elongation of said mainbody.
 8. The MEMS device of claim 1, wherein each of the first andsecond deformable structures further has a respective connection portionextending from the main body and coupled to the mobile structure.
 9. TheMEMS device of claim 8, wherein the connection portion extendsperpendicular to the respective direction of elongation of the mainbody.
 10. The MEMS device of claim 1, wherein each of the first andsecond deformable structures comprises a respective semiconductorregion.
 11. A MEMS device, comprising: a fixed structure; a mobilestructure with a reflecting element coupled to the fixed structurethrough at least a first deformable structure and a second deformablestructure, wherein each of the first and second deformable structuresincludes a respective main body having an elongated shape along arespective direction of elongation; a plurality of main piezoelectricelements mounted to the main body of each of the first and seconddeformable structures along said direction of elongation, said mainpiezoelectric elements configured to be electrically controlled forcausing oscillations of the mobile structure about a first axis and asecond axis, respectively; and a plurality of secondary piezoelectricelements mounted to the main body of each of the first and seconddeformable structures, the main piezoelectric elements and the secondarypiezoelectric elements being interspersed with one another in saiddirection of elongation, said secondary piezoelectric elements mountedto the first deformable structure configured to be controlled so as tovary a first resonance frequency of the mobile structure about the firstaxis; wherein the reflecting element is greater than each of theplurality of main piezoelectric elements and each of the plurality ofsecondary piezoelectric elements in length and width.
 12. The MEMSdevice of claim 11, said secondary piezoelectric elements mounted to thesecond deformable structure configured to be controlled so as to vary asecond resonance frequency of the mobile structure about the secondaxis.
 13. The MEMS device of claim 11, wherein the secondarypiezoelectric elements each have an elongated shape extending in adirection transverse to the direction of elongation of said main body.14. The MEMS device of claim 11, wherein each of the first and seconddeformable structures includes a connection portion extending from themain body and coupled to the mobile structure.
 15. The MEMS device ofclaim 14, wherein the connection portion extends perpendicular to therespective direction of elongation of the main body.
 16. The MEMS deviceof claim 2, wherein each of the first and second deformable structuresfurther has a respective connection portion extending from the main bodyand coupled to the mobile structure.
 17. The MEMS device of claim 16,wherein the connection portion extends perpendicular to the respectivedirection of elongation of the main body.
 18. The MEMS device of claim2, wherein said fixed structure is made at least in part ofsemiconductor material; and wherein each of the first and seconddeformable structures comprises a respective bottom electrode region;wherein the main piezoelectric elements of the first deformablestructure extend on top of the bottom electrode region of the firstdeformable structure; and wherein the main piezoelectric elements of thesecond deformable structure extend on top of the bottom electrode regionof the second deformable structure.
 19. The MEMS device of claim 18,wherein each of the first and second deformable structures comprises arespective semiconductor region.